Device Structure ◆ CMOS image sensor ; N7 V3 L3 b, x- H2 g
◆ Image size# ?$ K- E) O- ^9 o( N8 P
Type 1/2.8 % H/ ^) V# ^7 V/ o4 G( J
◆ Total number of pixels
; j: I9 T! l4 o4 T3 _. Q+ o1945 (H) × 1109 (V) approx. 2.16 M pixels
; X' o* y' b. B7 z◆ Number of effective pixels , C6 l& [! z( q% k& P
1945 (H) × 1097 (V) approx. 2.13 M pixels
0 T2 S2 u6 A. o' L, r% P9 i◆ Number of active pixels % t% `- D# W% T- d+ w
1937 (H) × 1097 (V) approx. 2.12 M pixels
# k+ I3 A# O: E- c◆ Number of recommended recording pixels
3 t1 k a* o# }+ w2 A1920 (H) × 1080 (V) approx. 2.07 M pixels : l2 Y0 [3 e0 i! f. E
◆ Unit cell size ' L7 B9 ~+ ~+ b3 K
2.9 µm (H) × 2.9 µm (V) 2 t' a* z3 l4 H% x
◆ Optical black # q8 v" }( y0 {7 R1 }
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
& U* g. p0 J' ?+ |, f. A) I; u◆ Dummy / A7 H* ^- F1 {3 l. {7 q R* D
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels 2 D& I5 A$ ~) t8 Z4 x2 ]
◆ Substrate material 5 Z* A% }" @6 \. P. A
Silicon+ u: X7 i1 F; f/ C
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发表于 2022-3-30 14:18:23