Device Structure ◆ CMOS image sensor
# c; a* ~" Z6 O9 V8 Y◆ Image size
9 q3 U5 ^9 @" H+ p l. D6 w& H7 g8 ] Type 1/2.8
) t+ |. U3 a: [( d: i# i G◆ Total number of pixels
8 G- A# x5 e$ f1945 (H) × 1109 (V) approx. 2.16 M pixels
0 S" }- {6 } r, G◆ Number of effective pixels
2 f' T I; y, {" }4 ~1 d1945 (H) × 1097 (V) approx. 2.13 M pixels + e# U3 v% x0 q
◆ Number of active pixels
0 e9 I$ b8 p& p& a K6 U1937 (H) × 1097 (V) approx. 2.12 M pixels " ~1 x7 H3 e$ P, T" C m
◆ Number of recommended recording pixels
0 I) q% a; e0 I# s* t1920 (H) × 1080 (V) approx. 2.07 M pixels
. `; t' @' ~1 A◆ Unit cell size " [; K0 \2 n+ L8 r8 |
2.9 µm (H) × 2.9 µm (V) ' h2 A( J2 S* i8 @, b& i2 Z4 a
◆ Optical black ! l/ \6 z; ^3 c7 z8 Y* _- t/ U
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
4 A/ j) N& s6 X- v" ~5 s◆ Dummy
% l- |( f! o" z7 n4 S4 }' D _4 sHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
: D& W) n) d" f: o* L% s◆ Substrate material
/ h. g5 n. G( T t. USilicon
! C0 K# _" X7 M! i# f% c F3 { |