Device Structure ◆ CMOS image sensor
( l& _* v1 r- ~# X0 J, L0 g◆ Image size, N4 ~0 R& T/ c- j
Type 1/2.8
, R+ ~: `- d/ u( Z _( o◆ Total number of pixels + e1 f7 ^- W w# H H0 T) ~
1945 (H) × 1109 (V) approx. 2.16 M pixels " U9 r8 C8 e4 z7 e; Z
◆ Number of effective pixels , S- |& o3 R; ?6 K
1945 (H) × 1097 (V) approx. 2.13 M pixels 5 G0 A; U o! }
◆ Number of active pixels , ]# O; m; w8 t- v* r, K# ~
1937 (H) × 1097 (V) approx. 2.12 M pixels & A, y/ X9 N3 k4 ^( P; Z
◆ Number of recommended recording pixels 3 g/ \ `' ^7 A5 e* `
1920 (H) × 1080 (V) approx. 2.07 M pixels
4 Y2 Y- C2 K8 ^- r4 B4 p6 | X) Q◆ Unit cell size 6 l+ D0 {3 G/ N F0 k
2.9 µm (H) × 2.9 µm (V)
; ]$ q# G% Y5 d◆ Optical black
& |3 d6 S0 n" ^! m0 p7 b/ AHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels , I# Z; m; y) ?, J
◆ Dummy , e4 F$ h! F: a- v) r
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
$ J# ~- y5 D# \6 I$ j7 {◆ Substrate material ; {& p I# z3 T6 L# V. t9 X1 d
Silicon
6 _* G5 x0 P& ]! d# I! r |
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