Device Structure ◆ CMOS image sensor " ]9 g2 T* m- Z, v$ c
◆ Image size
" |- ^+ k. J- e* P/ h3 v4 ^8 ] Type 1/2.8 ; c a- L0 f4 u9 D7 l4 P! D: P
◆ Total number of pixels ; N2 K' ?- J* _: B/ @! \
1945 (H) × 1109 (V) approx. 2.16 M pixels . q4 o, o2 O& Y; O+ B
◆ Number of effective pixels
4 f7 X: S+ O( I0 Z1945 (H) × 1097 (V) approx. 2.13 M pixels ( K" y8 d0 v! J$ U0 r
◆ Number of active pixels 0 i6 C3 F, r( C; K) ]1 g+ G8 _
1937 (H) × 1097 (V) approx. 2.12 M pixels ( L( @) T# V( ^" m3 W
◆ Number of recommended recording pixels
+ Q/ z9 @/ C9 B& _0 w! @4 I1920 (H) × 1080 (V) approx. 2.07 M pixels
4 ?3 r% w4 `9 R3 j* y◆ Unit cell size 2 S& d: ]6 g/ p' m9 x6 c) |
2.9 µm (H) × 2.9 µm (V) . G; e t0 b. I, O4 X3 y
◆ Optical black
, T" H' k" h- c7 l- fHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels % P9 u2 E+ [7 \# T
◆ Dummy
& F: c. d) ]6 b ?- k3 N4 ?Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
! s0 M+ \+ R d8 l; M( M% _◆ Substrate material * K9 z9 c2 P2 E8 J: K+ `
Silicon
3 S* H6 ]" {* W/ g |
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