Device Structure ◆ CMOS image sensor
( d6 O2 K, g |2 X7 F, c◆ Image size' p6 Y, {/ `# d* t6 D
Type 1/2.8
: R/ D8 E; B0 R) ~) c* b) X1 Z◆ Total number of pixels
3 v: ? v% h+ L: ], ?+ n0 G7 U1945 (H) × 1109 (V) approx. 2.16 M pixels
" M4 w9 m* @0 |0 H4 ?8 u/ i◆ Number of effective pixels
% b# D5 {; B+ \. |/ F$ Y5 O1945 (H) × 1097 (V) approx. 2.13 M pixels 0 {0 [, D& C5 [* A* N/ W# T
◆ Number of active pixels
! _, f5 Y1 y% X+ T. z1937 (H) × 1097 (V) approx. 2.12 M pixels ! n- X$ U/ } h) f
◆ Number of recommended recording pixels 6 f/ W `$ a) x& w
1920 (H) × 1080 (V) approx. 2.07 M pixels
3 C8 Q- e3 J9 E; ]8 ]8 x9 f! f◆ Unit cell size 0 |+ o0 r/ P) v' ~/ Z/ r9 @
2.9 µm (H) × 2.9 µm (V) & e, s5 m3 f# s, {7 M
◆ Optical black 3 J& m0 Y- ?3 ~3 C
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
+ J) p. {3 t1 G/ b s◆ Dummy 8 e4 g6 o- K f: P6 ^8 _* B
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
; @9 q% i& `! l+ h( k1 x% J$ P◆ Substrate material
4 k( w$ Q; Q: `/ Z$ T8 {) e' {$ k2 ESilicon. C& }# t5 V0 Z1 n) ^- X) [
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