Device Structure ◆ CMOS image sensor ' {! q% a, J" o( c. [9 Q& N; a
◆ Image size
4 \! I2 M( T) x9 v0 h' M Type 1/2.8
/ g) K: c& X3 ~5 \◆ Total number of pixels
. J# _; H6 t; P+ f1945 (H) × 1109 (V) approx. 2.16 M pixels . c, \% N% j% e: r$ H# ?
◆ Number of effective pixels $ W& h; S1 [3 D- y" l! l
1945 (H) × 1097 (V) approx. 2.13 M pixels
3 {& q* h0 |3 L* G- K7 ~9 T- A `◆ Number of active pixels ' v$ _0 {! p7 p4 m9 G) d& D3 z
1937 (H) × 1097 (V) approx. 2.12 M pixels
& ~) z0 Y0 h& w! } A% I) M% ]◆ Number of recommended recording pixels
4 ]; _( h* Q r2 ` a) Q' [" S1920 (H) × 1080 (V) approx. 2.07 M pixels " X6 b4 O4 f W+ r
◆ Unit cell size 1 z4 C1 ?0 [& F$ @
2.9 µm (H) × 2.9 µm (V)
6 v2 G* U0 n( v* s$ d) s/ x/ q◆ Optical black
: w* H- G ]- cHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels ! X# f q* }5 l% k
◆ Dummy & X% N T& L; f+ X5 y. d9 n* a
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels " _( H4 ` @, v. }+ M9 v. W
◆ Substrate material
/ x! G2 `; N3 L2 W/ ?Silicon1 F: G( A, O& J' E. k9 c
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