Device Structure ◆ CMOS image sensor 2 W) n0 I6 g" K; {
◆ Image size) |! X: V( F6 P
Type 1/2.8
3 p' @6 D% |% N1 [5 `) r◆ Total number of pixels
( Y$ y. x/ n O# {3 Z3 `0 Y1945 (H) × 1109 (V) approx. 2.16 M pixels 6 M% }' Z( h6 F- ]& l
◆ Number of effective pixels
0 O5 ~- \ V7 z; w: g* H1945 (H) × 1097 (V) approx. 2.13 M pixels 5 J( v6 I: r% w x3 Q8 `
◆ Number of active pixels
/ ~5 B' @& i# _" A$ p) _7 [1937 (H) × 1097 (V) approx. 2.12 M pixels + H$ r/ o/ i% l( J }
◆ Number of recommended recording pixels P% Y4 B& D" L) n7 \: F
1920 (H) × 1080 (V) approx. 2.07 M pixels
# Q! s, w$ y' E# @$ D' b" _ Z◆ Unit cell size
+ K' v% B6 Z* Z5 }3 A) I2.9 µm (H) × 2.9 µm (V) . W& O/ F0 p6 B0 _3 \" o& P
◆ Optical black # l9 Y, X1 x+ H9 k( l! E7 h
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels ! K% ~* b) Q7 O' E% u
◆ Dummy
- c) x& x7 T$ h$ E% g$ Q4 ^Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels & P6 ~% p$ ^$ V" `8 Q9 h
◆ Substrate material * l! n! }! {* K: W8 P- Q% m
Silicon
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